Deformation Potentials and Electron-Phonon Coupling in Silicon Nanowires

被引：56

作者：

Murphy-Armando, F. ^{[1
]}

Fagas, G. ^{[1
]}

Greer, J. C. ^{[1
]}

机构：

[1] Univ Coll Cork, Tyndall Natl Inst, Cork, Ireland

来源：

NANO LETTERS | 2010年 / 10卷 / 03期

基金：

爱尔兰科学基金会;

关键词：

Silicon nanowire; electron-phonon; deformation potentials; mobility; relaxation time; PRESSURE COEFFICIENTS; BAND-GAPS; APPROXIMATION;

D O I：

10.1021/nl9034384

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The role of reduced dimensionality and of the surface on electron-phonon (e-ph) coupling in silicon nanowires is determined from first principles, Surface termination and chemistry is found to have a relatively small influence, whereas reduced dimensionality fundamentally alters the behavior of deformation potentials. As a consequence, electron coupling to "breathing modes" emerges char cannot be described by conventional treatments of e-ph coupling. The consequences for physical properties such as scattering lengths and mobilities are significant: the mobilities for [110] grown wires are 6 times larger than those for [100] wires, all effect that cannot be predicted without the form we find for Si nanowire deformation potentials.

引用

收藏

页码：869 / 873

页数：5

相关论文

共 24 条

[11] Modeling of electron mobility in gated silicon nanowires at room temperature: Surface roughness scattering, dielectric screening, and band nonparabolicity [J].

Jin, Seonghoon ;

Fischetti, Massimo V. ;

Tang, Ting-Wei .

JOURNAL OF APPLIED PHYSICS, 2007, 102 (08)

[12] Surface chemical control of the electronic structure of silicon nanowires: Density functional calculations [J].

Leu, Paul W. ;

Shan, Bin ;

Cho, Kyeongjae .

PHYSICAL REVIEW B, 2006, 73 (19)

[13] Ab initio calculations of the mechanical and electronic properties of strained Si nanowires [J].

Leu, Paul W. ;

Svizhenko, Alexei ;

Cho, Kyeongjae .

PHYSICAL REVIEW B, 2008, 77 (23)

[14] Magneto-optical Kerr effect in perpendicularly magnetized Co/Pt films on two-dimensional colloidal crystals [J].

Liu, Z. ;

Shi, L. ;

Shi, Z. ;

Liu, X. H. ;

Zi, J. ;

Zhou, S. M. ;

Wei, S. J. ;

Li, J. ;

Zhang, X. ;

Xia, Y. J. .

APPLIED PHYSICS LETTERS, 2009, 95 (03)

[15] First-principles calculation of carrier-phonon scattering in n-type Si1-xGex alloys [J].

Murphy-Armando, F. ;

Fahy, S. .

PHYSICAL REVIEW B, 2008, 78 (03)

[16] Silicon nanowire band gap modification [J].

Nolan, Michael ;

O'Callaghan, Sean ;

Fagas, Giorgos ;

Greer, James C. ;

Frauenheim, Thomas .

NANO LETTERS, 2007, 7 (01) :34-38

[17] Electron transport in silicon nanowires: The role of acoustic phonon confinement and surface roughness scattering [J].

Ramayya, E. B. ;

Vasileska, D. ;

Goodnick, S. M. ;

Knezevic, I. .

JOURNAL OF APPLIED PHYSICS, 2008, 104 (06)

[18] Parametrization of a silicon nanowire effective mass model from sp3d5s* orbital basis calculations [J].

Sajjad, Redwan Noor ;

Alam, Khairul ;

Khosru, Quazi D. M. .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2009, 24 (04)

[19] Coaxial silicon nanowires as solar cells and nanoelectronic power sources [J].

Tian, Bozhi ;

Zheng, Xiaolin ;

Kempa, Thomas J. ;

Fang, Ying ;

Yu, Nanfang ;

Yu, Guihua ;

Huang, Jinlin ;

Lieber, Charles M. .

NATURE, 2007, 449 (7164) :885-U8

[20] Silicon nanowire solar cells [J].

Tsakalakos, L. ;

Balch, J. ;

Fronheiser, J. ;

Korevaar, B. A. ;

Sulima, O. ;

Rand, J. .

APPLIED PHYSICS LETTERS, 2007, 91 (23)