Deformation Potentials and Electron-Phonon Coupling in Silicon Nanowires

被引：56

作者：

Murphy-Armando, F. ^{[1
]}

Fagas, G. ^{[1
]}

Greer, J. C. ^{[1
]}

机构：

[1] Univ Coll Cork, Tyndall Natl Inst, Cork, Ireland

来源：

NANO LETTERS | 2010年 / 10卷 / 03期

基金：

爱尔兰科学基金会;

关键词：

Silicon nanowire; electron-phonon; deformation potentials; mobility; relaxation time; PRESSURE COEFFICIENTS; BAND-GAPS; APPROXIMATION;

D O I：

10.1021/nl9034384

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The role of reduced dimensionality and of the surface on electron-phonon (e-ph) coupling in silicon nanowires is determined from first principles, Surface termination and chemistry is found to have a relatively small influence, whereas reduced dimensionality fundamentally alters the behavior of deformation potentials. As a consequence, electron coupling to "breathing modes" emerges char cannot be described by conventional treatments of e-ph coupling. The consequences for physical properties such as scattering lengths and mobilities are significant: the mobilities for [110] grown wires are 6 times larger than those for [100] wires, all effect that cannot be predicted without the form we find for Si nanowire deformation potentials.

引用

页码：869 / 873

页数：5

共 24 条

[1] Silicon nanowires as efficient thermoelectric materials [J].