A Static, Switching, Short-circuit Characteristics of 1.2 kV 4H-SiC MOSFETs: Comparison between Linear and (Bridged) Hexagonal Topology

被引：2

作者：

Kim, Dongyoung ^{[1
]}

Yun, Nick ^{[1
]}

DeBoer, Skylar ^{[1
]}

Morgan, Adam J. ^{[1
]}

Jang, Seung Yup ^{[1
]}

Sung, Woongje ^{[1
]}

Fan, Junchong ^{[2
]}

Yu, Susanna ^{[2
]}

Kang, Minseok ^{[2
]}

Agarwal, Anant K. ^{[2
]}

机构：

[1] State Univ New York Polytech Inst, Coll Nanoscale Sci & Engn, Albany, NY 12203 USA

[2] Ohio State Univ, Dept Elect & Comp Engn, Columbus, OH 43210 USA

来源：

2021 IEEE 8TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA) | 2021年

关键词：

Short-circuit ruggedness; Topology; Hexagonal; Linear; Switching; 4H-SiC; MOSFETs; SIC MOSFET;

D O I：

10.1109/WiPDA49284.2021.9645098

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports the layout approaches and resulting static, dynamic, and short-circuit (SC) ruggedness characteristics of 1.2 kV power MOSFETs fabricated on a 6-inch 4H-SiC substrate. Different layout topologies (linear and hexagonal) and different design variations (with and without bridge of P-well) were investigated to study their effect. It was experimentally demonstrated that 1) the hexagonal layout topology enables a low specific on-resistance (R-on.sp), 2) the linear MOSFET can be utilized in high frequency applications due to fast switching speed, and 3) the hexagonal topology with bridge offers greater reliability and ruggedness.

引用

页码：9 / 13

页数：5

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