Monocrystalline and polycrystalline ZnO and ZnMnO films grown by atomic layer epitaxy -: Growth and characterization

被引：7

作者：

Wójcik, A

Kopalko, K

Godlewski, M ^{[1
]}

Lusakowska, E

Paszkowicz, W

Dybko, K

Domagala, J

Szczerbakow, A

Kaminska, E

机构：

[1] Cardinal S Wyszynski Univ, Coll Sci, Dept Math & Nat Sci, Warsaw, Poland

[2] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

[3] Inst Electr Mat Technol, PL-02668 Warsaw, Poland

来源：

ACTA PHYSICA POLONICA A | 2004年 / 105卷 / 06期

关键词：

D O I：

10.12693/APhysPolA.105.667

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Recently we demonstrated growth of monocrystalline ZnO films by atomic layer epitaxy in the gas flow variant using inorganic precursors. In this study, we discuss properties of ZnO films grown with organic precursors. Successful Mn doping of the ZnO films during the growth was achieved using the Mn-thd complex. Secondary ion mass spectroscopy and X-ray investigations reveal the contents of Mn up to about 20% of the cationic component.

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收藏

页码：667 / 673

页数：7

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