Progress in far-infrared detection technology

被引：2

作者：

Zhou, YD ^{[1
]}

Becker, CR ^{[1
]}

Ashokan, R ^{[1
]}

Selamet, Y ^{[1
]}

Chang, Y ^{[1
]}

Boreiko, RT ^{[1
]}

Betz, AL ^{[1
]}

Sivananthan, S ^{[1
]}

机构：

[1] Univ Illinois, Microphys Lab, Chicago, IL 60607 USA

来源：

MATERIALS FOR INFRARED DETECTORS II | 2002年 / 4795卷

关键词：

far-infrared; HgCdTe; molecular beam epitaxy(MBE); II-VI superlattice; detectors; arrays;

D O I：

10.1117/12.452270

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

II-VI intrinsic very long wavelength infrared (VLWIR, lambda(c) similar to 20 to 50 mum) materials, HgCdTe alloys as well as HgCdTe/CdTe superlattices, were grown by molecular beam epitaxy (MBE). The layers were characterized by means of X-ray diffraction, conventional Fourier transform infrared spectroscopy, Hall effect measurements and transmittance electron microscopy (TEM). Photoconductor devices were processed and their spectral response was also measured to demonstrate their applicability in the VLWIR region.

引用

页码：121 / 128

页数：8

共 4 条

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