Phosphorus incorporation during InP(001) homoepitaxial growth by solid source molecular beam epitaxy

被引：2
作者：
Barnes, GW
Tok, ES
Neave, JH
Jones, TS [1 ]
机构：
[1] Univ London Imperial Coll Sci Technol & Med, Ctr Elect Mat & Devices, Dept Chem, London SW7 2AZ, England
[2] Natl Univ Singapore, Dept Mat Sci, Singapore 119260, Singapore
来源：
SURFACE SCIENCE | 2003年 / 531卷 / 03期
基金：
英国工程与自然科学研究理事会;
关键词：
indium phosphide; semiconducting surfaces; growth; molecular beam epitaxy;
D O I：
10.1016/S0039-6028(03)00535-1
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The incorporation behaviour of phosphorus (P,) during growth by molecular beam epitaxy of InP thin films on InP(0 0 1) substrates has been studied in situ by reflection high energy electron diffraction. The incorporation coefficient of P, decreases from 0.94 at 360 degreesC to 0.54 at 470 degreesC. This behaviour is attributed to the increasing fraction of the incident P, flux that desorbs from the surface at higher temperatures and does not contribute to layer growth. The low-and temperature-dependent incorporation coefficients imply the need for high P-2:In flux ratios and low substrate temperatures for the preparation of smooth InP epitaxial layers. (C) 2003 Elsevier Science B.V. All rights reserved.
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收藏
页码：L383 / L387
页数：5
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