Young's modulus measurement of nickel silicide film on crystal silicon by a surface profiler

被引：16

作者：

Qin, M ^{[1
]}

Poon, VMC

机构：

[1] Southeast Univ, Ctr Microelect, Nanjing 210096, Peoples R China

[2] Hong Kong Univ Sci & Technol, Dept Elect & Elect Engn, Kowloon, Hong Kong, Peoples R China

来源：

JOURNAL OF MATERIALS SCIENCE LETTERS | 2000年 / 19卷 / 24期

关键词：

D O I：

10.1023/A:1006729009092

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The Young's modulus of NiSi film formed at 350 °C on single crystal was investigated by measuring the deflections of NiSi and Si3N4 beams using a surface profiler. The measuring method was quite simple but the precision depends on the accuracy of the Young's modulus of the reference material. The measured Young's modulus of NiSi formed at 350 °C is about 132 GPa, which is lower than that of normal grown polysilicon and Si3N4. It is making NiSi a good structural material for microelectromechanical systems application.

引用

页码：2243 / 2245

页数：3

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