Investigation of Low-Cost Surface Processing Techniques for Large-Size Multicrystalline Silicon Solar Cells

被引:28
作者
Cheng, Yuang-Tung [1 ]
Ho, Jyh-Jier [1 ]
Lee, WilliamJ. [2 ]
Tsai, Song-Yeu [2 ]
Lu, Yung-An [1 ]
Liou, Jia-Jhe [1 ]
Chang, Shun-Hsyung [3 ]
Wang, Kang L. [4 ]
机构
[1] Natl Taiwan Ocean Univ, Dept Elect Engn, Chilung 20224, Taiwan
[2] Ind Technol Res Inst, Photovolta Technol Ctr, Hsinchu 31061, Taiwan
[3] Natl Kaohsiung Marine Univ, Dept Microelect Engn, Kaohsiung 81143, Taiwan
[4] Univ Calif Los Angeles, Device Res Lab, Dept Elect Engn, Los Angeles, CA 90095 USA
关键词
P-N-JUNCTION; PASSIVATION; HYDROGEN; TEXTURIZATION; IMPROVEMENT; DIFFUSION; MECHANISM; LAYERS; FILMS;
D O I
10.1155/2010/268035
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The subject of the present work is to develop a simple and effective method of enhancing conversion efficiency in large-size solar cells using multicrystalline silicon (mc-Si) wafer. In this work, industrial-type mc-Si solar cells with area of 125 x 125 mm(2) were acid etched to produce simultaneously POCl3 emitters and silicon nitride deposition by plasma-enhanced chemical vapor deposited (PECVD). The study of surface morphology and reflectivity of different mc-Si etched surfaces has also been discussed in this research. Using our optimal acid etching solution ratio, we are able to fabricate mc-Si solar cells of 16.34% conversion efficiency with double layers silicon nitride (Si3N4) coating. From our experiment, we find that depositing double layers silicon nitride coating on mc-Si solar cells can get the optimal performance parameters. Open circuit (V-oc) is 616 mV, short circuit current (J(sc)) is 34.1 mA/cm(2), and minority carrier diffusion length is 474.16 mu m. The isotropic texturing and silicon nitride layers coating approach contribute to lowering cost and achieving high efficiency in mass production.
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页数:6
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