Versatile high power pulse-laser source for pico- and nanosecond optical pulses

被引：3

作者：

Liero, Armin ^{[1
]}

Klehr, Andreas ^{[1
]}

Knigge, Andrea ^{[1
]}

Heinrich, Wolfgang ^{[1
]}

机构：

[1] Leibniz Inst Hochstfrequenztech, Ferdinand Braun Inst, D-12489 Berlin, Germany

来源：

ENGINEERING RESEARCH EXPRESS | 2020年 / 2卷 / 01期

关键词：

picosecond laser source; GaN HEMT; fast current driver; optical pulse gating; mode locking;

D O I：

10.1088/2631-8695/ab5be5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper presents a pulse-laser source for the generation of ps and ns laser pulses with more than 50 W peak output power. The final stages of the drivers use GaN transistors and are capable of switching currents of 0.8 A with 200 ps minimum pulse width and 50 A with 3 ns minimum pulse width. The pulses can be externally triggered by ECL logic. Both single-pulse and pulse train modes are possible.

引用

页数：6

共 9 条

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