Vacancy-type defects in electron and proton irradiated II-VI compounds

被引：5
|
作者：
Brunner, S [1 ]
Puff, W
Mascher, P
Balogh, AG
Baumann, H
机构：
[1] Graz Tech Univ, Inst Tech Phys, A-8010 Graz, Austria
[2] McMaster Univ, Dept Engn Phys, Ctr Electrophoton Mat & Devices, Hamilton, ON L8S 4L7, Canada
[3] TH Darmstadt, Dept Mat Sci, D-6100 Darmstadt, Germany
[4] Univ Frankfurt, Inst Kernphys, D-6000 Frankfurt, Germany
来源：
DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3 | 1997年 / 258-2卷
关键词：
II-VI compounds; positron annihilation; point defects; electron and proton irradiation; POSITRON-ANNIHILATION; POINT-DEFECTS; ZNSE; ZNO;
D O I：
10.4028/www.scientific.net/MSF.258-263.1419
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Positron lifetime and Doppler-broadening measurements have been performed on the wide-bandgap compound semiconductors ZnO, ZnS, ZnSe, and ZnTe to investigate the basic properties of intrinsic and radiation induced defects. The samples were irradiated either with 3 MeV protons at 223 K to a fluence of 1.2x10(18) p/cm(2) or 1 MeV electrons at 4 K to a fluence of 1x10(18) e/cm(2). The isochronal annealing was done in an Ar atmosphere. It was found that both electron and proton irradiation caused significant changes in the positron annihilation characteristics and several annealing stages were observed, related to the annealing of variously sized vacancy complexes.
引用
收藏
页码：1419 / 1424
页数：6
相关论文
共 50 条
  • [21] VACANCY-TYPE DEFECTS IN ION-IMPLANTED DIAMONDS PROBED BY MONOENERGETIC POSITRON BEAMS
    UEDONO, A
    KAWANO, T
    TANIGAWA, S
    SUZUKI, R
    OHDAIRA, T
    MIKADO, T
    FUJII, S
    SHIKATA, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (4A): : 1772 - 1777
  • [22] TEM investigation of point defect interactions in II-VI compounds
    Loginov, YY
    Brown, PD
    Humphreys, CJ
    ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, 1995, 196- : 1461 - 1465
  • [23] Evaluation of vacancy-type defects in ZnO by the positron annihilation lifetime spectroscopy
    R. Ono
    T. Togimitsu
    W. Sato
    Journal of Radioanalytical and Nuclear Chemistry, 2015, 303 : 1223 - 1226
  • [24] The estimation of the vacancy-type defects density in thin Fe film with slow positron beams
    Nagata, T
    Terashima, Y
    Takagi, K
    Kawai, T
    Kanazawa, I
    Suzuki, R
    Ohdaira, T
    Komori, F
    Ito, Y
    POSITRON ANNIHILATION - ICPA-12, 2001, 363-3 : 490 - 492
  • [25] Vacancy-type detects in proton-irradiated 6H-and 4H-SiC: A systematic study with positron annihilation techniques
    Puff, W
    Balogh, AG
    Mascher, P
    SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 969 - 972
  • [26] VARIABLE-ENERGY POSITRON STUDIES OF VACANCY-TYPE DEFECTS IN TIN FILMS ON SI
    WEI, L
    DOSHO, C
    CHO, Y
    TANIGAWA, S
    HINODE, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (08): : L1500 - L1502
  • [27] The slow positron beam technique -: A unique tool for the study of vacancy-type defects in semiconductors
    Krause-Rehberg, R
    Eichler, S
    Gebauer, J
    Börner, F
    SOLID STATE PHENOMENA, 1998, 63-4 : 291 - 300
  • [28] Evaluation of vacancy-type defects in ZnO by the positron annihilation lifetime spectroscopy
    Ono, R.
    Togimitsu, T.
    Sato, W.
    JOURNAL OF RADIOANALYTICAL AND NUCLEAR CHEMISTRY, 2015, 303 (02) : 1223 - 1226
  • [29] Defects in wide band gap II-VI crystals
    Neumark, GF
    MATERIALS SCIENCE & ENGINEERING R-REPORTS, 1997, 21 (01) : 1 - 46
  • [30] Calculations of electron mobility in II-VI semiconductors
    Vukmirovic, Nenad
    PHYSICAL REVIEW B, 2021, 104 (08)
12345