Vacancy-type defects in electron and proton irradiated II-VI compounds

被引：5
|
作者：
Brunner, S [1 ]
Puff, W
Mascher, P
Balogh, AG
Baumann, H
机构：
[1] Graz Tech Univ, Inst Tech Phys, A-8010 Graz, Austria
[2] McMaster Univ, Dept Engn Phys, Ctr Electrophoton Mat & Devices, Hamilton, ON L8S 4L7, Canada
[3] TH Darmstadt, Dept Mat Sci, D-6100 Darmstadt, Germany
[4] Univ Frankfurt, Inst Kernphys, D-6000 Frankfurt, Germany
来源：
DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3 | 1997年 / 258-2卷
关键词：
II-VI compounds; positron annihilation; point defects; electron and proton irradiation; POSITRON-ANNIHILATION; POINT-DEFECTS; ZNSE; ZNO;
D O I：
10.4028/www.scientific.net/MSF.258-263.1419
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Positron lifetime and Doppler-broadening measurements have been performed on the wide-bandgap compound semiconductors ZnO, ZnS, ZnSe, and ZnTe to investigate the basic properties of intrinsic and radiation induced defects. The samples were irradiated either with 3 MeV protons at 223 K to a fluence of 1.2x10(18) p/cm(2) or 1 MeV electrons at 4 K to a fluence of 1x10(18) e/cm(2). The isochronal annealing was done in an Ar atmosphere. It was found that both electron and proton irradiation caused significant changes in the positron annihilation characteristics and several annealing stages were observed, related to the annealing of variously sized vacancy complexes.
引用
收藏
页码：1419 / 1424
页数：6
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