Electrodynamical treatment of the electron-hole long-range exchange interaction in semiconductor nanocrystals

被引：16

作者：

Goupalov, SV ^{[1
]}

Lavallard, P

Lamouche, G

Citrin, DS

机构：

[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

[2] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

[3] Univ Paris 07, Phys Solides Grp, CNRS, UMR 7588, F-75251 Paris 05, France

[4] Univ Paris 06, F-75251 Paris 05, France

[5] Natl Res Council Canada, IMI, Boucherville, PQ J4B 6Y4, Canada

来源：

PHYSICS OF THE SOLID STATE | 2003年 / 45卷 / 04期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1134/1.1569020

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We show that the contribution to the fine structure of the ground exciton level in a semiconductor nanocrystal due to the long-range part of the electron-hole exchange interaction can be equivalently described as arising from the mechanical exciton interaction with the exciton-induced macroscopic longitudinal electric field. Particular cases of nanocrystals with cubic and wurtzite crystal lattice in the strong confinement regime are studied taking into account the complex structure of the valence band. A simplified model accounting for the exciton ground-level splitting and exploiting an effective local scalar susceptibility is established. (C) 2003 MAIK "Nauka / Interperiodica".

引用

页码：768 / 781

页数：14

共 36 条

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