Advances in 3D Heterogeneous Structures and Integration for Future ICs (Invited)

被引：0

作者：

Li, Cheng ^{[1
]}

Zhang, Feilong ^{[1
]}

Di, Mengfu ^{[1
]}

Pan, Zijin ^{[1
]}

Wang, Albert ^{[1
]}

机构：

[1] Univ Calif Riverside, Dept Elect & Comp Engn, Riverside, CA 92521 USA

来源：

2019 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S) | 2019年

基金：

美国国家科学基金会;

关键词：

3D; heterogeneous integration; HI; ESD; multi-gate; INDUCTORS;

D O I：

10.1109/S3S46989.2019.9320670

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reviews recent advances in developing 3D heterogeneous structures and integration technologies for future integrated circuits (IC) addressing the challenges related to the Moore's Law. Novel 3D heterogeneous structures, including nano crossbar phase-switching and graphene NEMS electrostatic discharge (ESD) protection devices, compact vertical inductors with stacked-via magnetic cores, in backend-of-line (BEOL) crosstalk isolation structures, and multi-gate transistors, are presented as enablers for future smart chips.

引用

页数：3

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