Advances in 3D Heterogeneous Structures and Integration for Future ICs (Invited)

被引:0
作者
Li, Cheng [1 ]
Zhang, Feilong [1 ]
Di, Mengfu [1 ]
Pan, Zijin [1 ]
Wang, Albert [1 ]
机构
[1] Univ Calif Riverside, Dept Elect & Comp Engn, Riverside, CA 92521 USA
来源
2019 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S) | 2019年
基金
美国国家科学基金会;
关键词
3D; heterogeneous integration; HI; ESD; multi-gate; INDUCTORS;
D O I
10.1109/S3S46989.2019.9320670
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper reviews recent advances in developing 3D heterogeneous structures and integration technologies for future integrated circuits (IC) addressing the challenges related to the Moore's Law. Novel 3D heterogeneous structures, including nano crossbar phase-switching and graphene NEMS electrostatic discharge (ESD) protection devices, compact vertical inductors with stacked-via magnetic cores, in backend-of-line (BEOL) crosstalk isolation structures, and multi-gate transistors, are presented as enablers for future smart chips.
引用
收藏
页数:3
相关论文
共 19 条
[1]   Systematic transient characterisation of graphene NEMS switch for ESD protection [J].
Chen, Qi ;
Ng, Jimmy ;
Li, Cheng ;
Lu, Fei ;
Wang, Chenkun ;
Zhang, Feilong ;
Xie, Ya-Hong ;
Wang, Albert .
MICRO & NANO LETTERS, 2017, 12 (11) :875-880
[2]   Systematic Characterization of Graphene ESD Interconnects for On-Chip ESD Protection [J].
Chen, Qi ;
Ma, Rui ;
Zhang, Wei ;
Lu, Fei ;
Wang, Chenkun ;
Liang, Owen ;
Zhang, Feilong ;
Li, Cheng ;
Tang, He ;
Xie, Ya-Hong ;
Wang, Albert .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016, 63 (08) :3205-3212
[3]   Novel Nanophase-Switching ESD Protection [J].
Lin, Lin ;
Zhang, Lijie ;
Wang, Xin ;
Liu, Jian ;
Zhao, Hui ;
Tang, He ;
Fang, Qiang ;
Shi, Zitao ;
Wang, Albert ;
Huang, Ru ;
Cheng, Yuhua .
IEEE ELECTRON DEVICE LETTERS, 2011, 32 (03) :378-380
[4]   A new modeling technique for simulating 3-D arbitrary conductor magnet structures for RFIC applications [J].
Long, HB ;
Feng, ZH ;
Feng, HG ;
Wang, A ;
Ren, TL ;
Bao, JB ;
Liu, F ;
Yang, C ;
Zhang, X .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2005, 52 (07) :1354-1363
[5]   In-Die Through-BEOL Metal Wall for Noise Isolation in 180-nm FD-SOI CMOS [J].
Lu, Fei ;
Chen, Qi ;
Wang, Chenkun ;
Zhang, Feilong ;
Li, Cheng ;
Ma, Rui ;
Wang, X. Shawn ;
Wang, Albert .
IEEE ELECTRON DEVICE LETTERS, 2017, 38 (05) :630-632
[6]  
Ma R, 2016, IEEE RAD FREQ INTEGR, P110, DOI 10.1109/RFIC.2016.7508263
[7]   A Dual-Polarity Graphene NEMS Switch ESD Protection Structure [J].
Ma, Rui ;
Chen, Qi ;
Zhang, Wei ;
Lu, Fei ;
Wang, Chenkun ;
Wang, Albert ;
Xie, Ya-Hong ;
Tang, He .
IEEE ELECTRON DEVICE LETTERS, 2016, 37 (05) :674-676
[8]  
Moore Gordon., 1965, IEEE SOLID STATE CIR, V38, P114, DOI DOI 10.1109/NSSC.2006.4785860
[9]   Design and Analysis of Vertical Nanoparticles-Magnetic-Cored Inductors for RF ICs [J].
Ni, Zao ;
Zhan, Jing ;
Fang, Qiang ;
Wang, Xin ;
Shi, Zitao ;
Yang, Yi ;
Ren, Tian-Ling ;
Wang, Albert ;
Cheng, Yuhua ;
Gao, Jianjun ;
Li, Xinxin ;
Yang, Chen .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 60 (04) :1427-1435
[10]  
Wang A., 2003, SRC