The impact of F contamination induced by the process on the gate oxide reliability

被引：7

作者：

Ghidini, G ^{[1
]}

Clementi, C ^{[1
]}

Drera, D ^{[1
]}

Maugain, F ^{[1
]}

机构：

[1] SGS Thomson Microelect, Non Volatile Memory Proc Dev, Cent R&D, I-20041 Agrate Brianza, Italy

来源：

MICROELECTRONICS AND RELIABILITY | 1998年 / 38卷 / 02期

关键词：

D O I：

10.1016/S0026-2714(97)00040-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects of F contaminants introduced by the CVD WSi2 deposition and diffused to the gate oxide interfaces by the thermal treatment performed during the process have been analyzed. High field stresses showed a degradation of the quality of the oxides contaminated by fluorine, but decreasing the stress field below a critical value of 10.5 MV/cm no more effect of fluorine on the gate oxide reliability was detectable. (C) 1998 Elsevier Science Ltd.

引用

页码：255 / 258

页数：4

共 7 条

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