Theoretical Considerations on Current Spreading in GaN-Based Light Emitting Diodes Fabricated with Top-Emission Geometry

被引：21

作者：

Kim, Hyunsoo ^{[1
]}

Lee, Sung-Nam ^{[2
]}

机构：

[1] Chonbuk Natl Univ, Semicond Phys Res Ctr, Sch Semicond & Chem Engn, Jeonju 561756, South Korea

[2] Korea Polytech Univ, Dept Nanoopt Engn, Shihung 429793, South Korea

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2010年 / 157卷 / 05期

关键词：

aluminium compounds; current density; electric resistance; electrodes; gallium compounds; III-V semiconductors; indium compounds; light emitting diodes; semiconductor epitaxial layers; wide band gap semiconductors;

D O I：

10.1149/1.3357271

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We report theoretical considerations regarding current spreading in GaN-based light emitting diodes (LEDs) fabricated with top-emission geometry, in which sheet resistances of both top transparent electrodes and n-layers are taken into consideration, whereas vertical resistance associated with the p-contact and the p-layer is neglected. The current spreading length (L-s) is inversely proportional to the injected current density (J(0)), namely, L-s proportional to J(0)(-1/2), and can be increased as the sheet resistances of either the transparent electrode or the n-layer are reduced. The effects of the material parameters (sheet resistances of transparent electrode and n-layer) on current spreading and hence the LED performance are discussed.

引用

页码：H562 / H564

页数：3

共 11 条

[1] InGaN blue light-emitting diodes with optimized n-GaN layer [J].

Eliashevich, I ;

Li, YX ;

Osinsky, A ;

Tran, CA ;

Brown, MG ;

Karlicek, RF .

LIGHT-EMITTING DIODES: RESEARCH, MANUFACTURING, AND APPLICATIONS III, 1999, 3621 :28-36

[2] Current crowding in GaN/InGaN light emitting diodes on insulating substrates [J].

Guo, X ;

Schubert, EF .

JOURNAL OF APPLIED PHYSICS, 2001, 90 (08) :4191-4195

[3] Current crowding and optical saturation effects in GaInN/GaN light-emitting diodes grown on insulating substrates [J].

Guo, X ;

Schubert, EF .

APPLIED PHYSICS LETTERS, 2001, 78 (21) :3337-3339

[4] STEADY-STATE JUNCTION-CURRENT DISTRIBUTIONS IN THIN RESISTIVE FILMS ON SEMICONDUCTOR JUNCTIONS (SOLUTIONS OF DEL 2V = +/- EV) [J].

JOYCE, WB ;

WEMPLE, SH .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (09) :3818-&

[5] Photonic high-frequency capacitance-voltage characterization of interface states in metal-oxide-semiconductor capacitors [J].

Kim, DM ;

Kim, HC ;

Kim, HT .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2002, 49 (03) :526-528

[6] Modeling of a GaN-based light-emitting diode for uniform current spreading [J].

Kim, H ;

Lee, JM ;

Huh, C ;

Kim, SW ;

Kim, DJ ;

Park, SJ ;

Hwang, H .

APPLIED PHYSICS LETTERS, 2000, 77 (12) :1903-1904

[7] Lateral current transport path, a model for GaN-based light-emitting diodes: Applications to practical device designs [J].

Kim, H ;

Park, SJ ;

Hwang, H ;

Park, NM .

APPLIED PHYSICS LETTERS, 2002, 81 (07) :1326-1328

[8]

Kim H, 2001, IEEE T ELECTRON DEV, V48, P1065, DOI 10.1109/16.925227

[9] Consideration of the actual current-spreading length of GaN-based light-emitting diodes for high-efficiency design [J].

Kim, Hyunsoo ;

Cho, Jaehee ;

Lee, Jeong Wook ;

Yoon, Sukho ;

Kim, Hyungkun ;

Sone, Cheolsoo ;

Park, Yongjo ;

Seong, Tae-Yeon .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2007, 43 (7-8) :625-632

[10] Measurements of current spreading length and design of GaN-based light emitting diodes [J].