Atomic layer deposition of copper seed layers

被引：93

作者：

Solanki, R ^{[1
]}

Pathangey, B

机构：

[1] Oregon Grad Inst, Dept Elect & Comp Engn, Beaverton, OR 97006 USA

[2] Accord SEG, Tempe, AZ 85282 USA

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2000年 / 3卷 / 10期

关键词：

D O I：

10.1149/1.1391185

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Deposition of thin and conformal copper films has been examined using atomic layer deposition as possible seed layers for subsequent electrodeposition. For this investigation, the copper films were deposited on glass plates as well as on Ta, TiN, and TaN films on silicon wafers. Typical resistivities of these films ranged from 4.25 mu Ohm cm for 20 nm thick copper films to 1.78 mu Ohm cm for 120 nm thick films. The adhesion of the copper films deposited on TiN and TaN at 300 degrees C was excellent. These films were highly conformal over high aspect ratio trenches. (C) 2000 The Electrochemical Society. S1099-0062(00)06-118-6. All rights reserved.

引用

页码：479 / 480

页数：2

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