Voltage divider effect for the improvement of variability and endurance of TaOx memristor

被引：151

作者：

Kim, Kyung Min ^{[1
]}

Yang, J. Joshua ^{[1
,2
]}

Strachan, John Paul ^{[1
]}

Grafals, Emmanuelle Merced ^{[1
]}

Ge, Ning ^{[1
]}

Melendez, Noraica Davila ^{[1
]}

Li, Zhiyong ^{[1
]}

Williams, R. Stanley ^{[1
]}

机构：

[1] Hewlett Packard Labs, Hewlett Packard Enterprise, Palo Alto, CA 94304 USA

[2] Univ Massachusetts, Dept Elect & Comp Engn, Amherst, MA 01003 USA

来源：

SCIENTIFIC REPORTS | 2016年 / 6卷

关键词：

RESISTIVE MEMORY; PERFORMANCE; RESISTANCE; DEVICE;

D O I：

10.1038/srep20085

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

The impact of a series resistor (R-S) on the variability and endurance performance of memristor was studied in the TaOx memristive system. A dynamic voltage divider between the R-S and memristor during both the set and the reset switching cycles can suppress the inherent irregularity of the voltage dropped on the memristor, resulting in a greatly reduced switching variability. By selecting the proper resistance value of R-S for the set and reset cycles respectively, we observed a dramatically improved endurance of the TaOx memristor. Such a voltage divider effect can thus be critical for the memristor applications that require low variability, high endurance and fast speed.

引用

页数：6

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