A 2 GHz oscillator based on a solidly mounted thin film bulk acoustic wave resonator

被引：4

作者：

Norling, Martin ^{[1
]}

Enlund, Johannes ^{[2
]}

Gevorgian, Spartak ^{[1
]}

Katardjiev, Ilia ^{[2
]}

机构：

[1] Chalmers Univ Technol, Microwave Elect Lab, MC2, S-41296 Gothenburg, Sweden

[2] Uppsala Univ, Angstrom Lab, S-75105 Uppsala, Sweden

来源：

2006 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-5 | 2006年

关键词：

bipolar transistor oscillator; acoustic resonator; thin film devices;

D O I：

10.1109/MWSYM.2006.249747

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes the design and measurement of a 2 GHz oscillator based on a Solidly Mounted Thin Film Bulk Acoustic wave Resonator (SM TFBAR). The circuitry is patterned on an alumina substrate on which the transistors and capacitors are soldered. The SM TFBAR chip is integrated by means of wirebonding. The measured oscillator centre frequency is about 2.038 GHz with an output power of 0 dBm.

引用

页码：1813 / +

页数：2

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