Orientation control of GaN {1 1 (2)over-bar 2} and {1 0 (1)over-bar (3)over-bar} grown on (1 0 (1)over-bar 0) sapphire by metal-organic vapor phase epitaxy

被引：45

作者：

Ploch, Simon ^{[1
]}

Frentrup, Martin ^{[1
]}

Wernicke, Tim ^{[2
]}

Pristovsek, Markus ^{[1
]}

Weyers, Markus ^{[2
]}

Kneissl, Michael ^{[1
,2
]}

机构：

[1] Tech Univ Berlin, Inst Solid State Phys, D-10623 Berlin, Germany

[2] Leibniz Ferdinand Braun Inst Berlin, D-12489 Berlin, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 2010年 / 312卷 / 15期

关键词：

MOVPE; Single crystal structure; GaN; Nitrides; Sapphire; LIGHT-EMITTING-DIODES; M-PLANE SAPPHIRE; SEMIPOLAR; SUBSTRATE; FILMS;

D O I：

10.1016/j.jcrysgro.2010.04.043

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The growth of semipolar GaN on (1 0 (1) over bar 0) (m-plane) sapphire was investigated by metal-organic vapor phase epitaxy (MOVPE). Most of the layers were polycrystalline with (1 1 (2) over bar 2), {1 0 (1) over bar (3) over bar} and {1 0 (1) over bar 0} as the dominant surface orientations. For incomplete nitridation and recrystallization the {1 0 (1) over bar (3) over bar} orientation was dominant. However, the {1 0 (1) over bar (3) over bar} surface is rough due to twinned crystallites. Growth at lower temperatures and with reduced gas flow velocity results in predominantly {1 1 (2) over bar 2} oriented smooth layers. The orientation was also found to be influenced by the nitridation and recrystallization process. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：2171 / 2174

页数：4