A physical and versatile aging compact model for hot carrier degradation in SiGe HBTs under dynamic operating conditions

被引：8
|
作者：
Mukherjee, C. [1 ]
Marc, F. [1 ]
Couret, M. [1 ]
Fischer, G. G. [2 ]
Jaoul, M. [1 ,3 ]
Celi, D. [3 ]
Aufinger, K. [4 ]
Zimmer, T. [1 ]
Maneux, C. [1 ]
机构：
[1] Univ Bordeaux, IMS Lab, UMR CNRS 5218, Cours Liberat, F-33405 Talence, France
[2] Leibniz Inst Innovat Milcroelelctron, IHP, D-15236 Frankfurt, Oder, Germany
[3] STMicroelectronics, F-38926 Crolles, France
[4] Infineon Technol AG, D-81726 Munich, Germany
来源：
SOLID-STATE ELECTRONICS | 2020年 / 163卷
基金：
欧盟地平线“2020”;
关键词：
Aging; Aging tests; Compact model; Hot-carrier degradation; Safe operating area; SiGe HBTs; MIXED-MODE; STRESS; RELIABILITY; BIAS; ISSUES;
D O I：
10.1016/j.sse.2019.107635
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a new physics-based compact model implementation for interface state creation due to hot-carrier degradation in advanced SiGe HBTs. This model accounts for dynamic stress bias conditions through a combination of the solution of reaction-diffusion theory and Fick's law of diffusion. The model reflects transistor degradation in terms of base recombination current parameters of HiCuM compact model and its accuracy has been validated against results from long-term DC and dynamic aging tests performed close to the safe-operating-areas of various HBT technologies.
引用
收藏
页数：9
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