Formation of Self Assembled PbTe Quantum Dots in CdTe on Si(111)

被引：4

作者：

Felder, F. ^{[1
]}

Fognini, A. ^{[1
]}

Rahim, M. ^{[1
]}

Fill, M. ^{[1
]}

Mueller, E. ^{[2
]}

Zogg, H. ^{[1
]}

机构：

[1] Swiss Fed Inst Technol, Thin Film Phys Grp, Technopk Str 1, CH-8005 Zurich, Switzerland

[2] Elect Microscopy ETH Zurich EMEZ, CH-8093 Zurich, Switzerland

来源：

PROCEEDINGS OF THE 14TH INTERNATIONAL CONFERENCE ON NARROW GAP SEMICONDUCTORS AND SYSTEMS | 2010年 / 3卷 / 02期

关键词：

PbTe; quantum dots; infrared; epitaxial growth; annealing; formation; photoluminescence; EPITAXY;

D O I：

10.1016/j.phpro.2010.01.149

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We describe the growth and formation of self assembled PbTe quantum dots in a CdTe host on a silicon (111) substrate. Annealing yields different photoluminescence spectra depending on initial PbTe layer thickness, thickness of the CdTe cap layer and annealing temperature. Generally two distinct emission peaks at similar to 0.3 eV and similar to 0.45 eV are visible. Model calculations explaining their temperature dependence are performed. The dot size corresponds well with the estimated sizes from electron microscopy images. The quantum dots may be used as absorber within a mid-infrared detector.

引用

页码：1121 / 1125

页数：5

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