Colour detection using buried triple pn junction structure implemented in BiCMOS process

被引：16
|
作者：
Ben Chouikha, M [1 ]
Lu, GN [1 ]
Sedjil, M [1 ]
Sou, G [1 ]
机构：
[1] Univ Paris 06, Lab Instruments & Syst, F-75252 Paris 05, France
来源：
ELECTRONICS LETTERS | 1998年 / 34卷 / 01期
关键词：
D O I：
10.1049/el:19980085
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A buried triple pn junction structure for colour detection is presented which can be implemented in a bipolar or BiCMOS process. The spectral responsivity of the device is characterised by three bandpass curves, selecting, respectively, blue, green and red components of a colour. A linear transformation method is developed for the colorimetric characterisation of the device. Colour differences between the detector specification and that of the CIE standard system have been evaluated. A mean colour difference of 2.15 has been obtained.
引用
收藏
页码：120 / 122
页数：3
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