Erasing mechanisms of Ag-In-Sb-Te Compact Disk (CD)-Rewritable

The erasing mechanisms of Ag-In-Sb-Te Compact Disk (CD)-Rewritable at CD 2X and CD 4X are studied by employing the transmission electron microscopy (TEM). The mechanisms of laser-induced crystallization vary with linear velocity as well as erase power. Under CD 2X recording, erasing is proceeded with nucleation and growth mechanism at low erase laser power. However, it is the direct grain growth that controls the mechanism of erasing at higher erase power: Under CD 4X recording, the erasing is dominated by direct grain growth originated from the interface between amorphous marks and their neighboring crystalline region, and the erase power determines the location where the grain growth begins.