STUDY ON RF MEMS SWITCH WITH FOUR PARALLEL OHM CONTACTS FOR POWER HANDLING ENHANCEMENT

被引：2

作者：

Liu, Zewen ^{[1
]}

Hou, Zhihao ^{[1
]}

Li, Zhijian ^{[1
]}

机构：

[1] Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2010年 / 52卷 / 03期

关键词：

RF MEMS; switch; power handling; wideband;

D O I：

10.1002/mop.25025

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this article, we present a recent study on enhancement of the power handling capability in wideband Ohm contact type RF MEMS switch The series Ohm contact switch presents a very good wideband RF performance in the DC to 30 GHz To its power handling capability, switch unit consisted of four parallel single Ohm contact (FPOC) had been designed, fabricated and measured In this way, the power handling capability can be improved because of the reduction of contact resistance The measurement results reveal that the FPOC witch insertion loss is 0.1 dB at 4 GHz and 0.3 dB at 10 GHz its isolations are 25 dB at 4 GHz and -16 dB at 10 GHz (C) 2010 Wiley Periodicals. Inc Microwave Opt Technol Lett 52, 665-667. 2010, Published online in Wiley InterScience (www.interscience.wiley.com) DOI 10.1002/mop.25025

引用

页码：665 / 667

页数：3