Increased Single-Event Transient Pulsewidths in a 90-nm Bulk CMOS Technology Operating at Elevated Temperatures

被引：24

作者：

Gadlage, Matthew J. ^{[1
]}

Ahlbin, Jonathan R. ^{[1
]}

Narasimham, Balaji ^{[2
]}

Ramachandran, Vishwanath ^{[1
]}

Dinkins, C. A. ^{[1
]}

Pate, N. D. ^{[1
]}

Bhuva, Bharat L. ^{[1
]}

Schrimpf, Ronald D. ^{[1
]}

Massengill, Lloyd W. ^{[1
]}

Shuler, Robert L. ^{[3
]}

McMorrow, Dale ^{[4
]}

机构：

[1] Vanderbilt Univ, Nashville, TN 37212 USA

[2] Broadcom Inc, Irvine, CA 92617 USA

[3] NASA, Lyndon B Johnson Space Ctr, Houston, TX 77058 USA

[4] USN, Res Lab, Washington, DC 20375 USA

来源：

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | 2010年 / 10卷 / 01期

关键词：

Ion radiation effects; single-event transient (SET); single-event upset; soft-error rate; 2-PHOTON ABSORPTION; PULSE-WIDTHS; PROPAGATION;

D O I：

10.1109/TDMR.2009.2036719

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Combinational-logic soft errors are expected to be the dominant reliability issue for advanced technologies. One of the major factors affecting the soft-error rates is single-event transient ( SET) pulsewidths. The SET pulsewidths, which are controlled by drift, diffusion, and parasitic bipolar-transistor parameters, are a strong function of operating temperature. In this paper, heavy-ion induced SET pulsewidths are reported at temperatures ranging from 25 degrees C to 100 degrees C, as measured with an autonomous SET capture circuit. Experimental and simulation results in a 90-nm bulk CMOS technology indicate an increase of as high as 37% in measured average SET pulsewidth with increasing operating temperature, with some pulses almost 2 ns long at higher temperatures. The increase in the SET pulsewidth can be explained by the dependence of parasitic bipolar-transistor characteristics on temperature.

引用

页码：157 / 163

页数：7

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