HgCdTe avalanche photodiode FPA

被引：3

作者：

Li Hao ^{[1
,2
]}

Lin Chun ^{[1
,3
]}

Zhou Song-Min ^{[1
]}

Guo Hui-Jun ^{[1
]}

Wang Xi ^{[1
]}

Chen Hong-Lei ^{[1
]}

Wei Yan-Feng ^{[1
]}

Chen Lu ^{[1
]}

Ding Rui-Jun ^{[1
]}

He Li ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Key Lab Infrared Imagining Mat & Detectors, Shanghai 200083, Peoples R China

[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

[3] ShanghaiTech Univ, Shanghai 201210, Peoples R China

来源：

JOURNAL OF INFRARED AND MILLIMETER WAVES | 2019年 / 38卷 / 05期

基金：

中国国家自然科学基金;

关键词：

HgCdTe; APD; FPA; NEPh; excess noise factor;

D O I：

10.11972/j.issn.1001-9014.2019.05.007

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

HgCdTe APD is one of the developing trends of third generation inferred FPA detectors. In this paper. we report the result on a 16x16 arrays of HgCdTe avalanche photodiode with 3. 56 mu m cutoff wavelength. The operability in gain exceeds 90% and relative gain dispersion is lower than 20%. NEPh is about 60 at 6 V bias with excess noise factor close to 1. 2.

引用

页码：587 / 590

页数：4

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