Interlayer and interfacial exchange coupling in ferromagnetic metal/semiconductor heterostructures

被引：20

作者：

Wilson, M. J. ^{[1
]}

Zhu, M. ^{[1
]}

Myers, R. C. ^{[2
]}

Awschalom, D. D. ^{[2
]}

Schiffer, P. ^{[1
]}

Samarth, N. ^{[1
]}

机构：

[1] Penn State Univ, Dept Phys, University Pk, PA 16802 USA

[2] Univ Calif Santa Barbara, Dept Phys, Santa Barbara, CA 93106 USA

来源：

PHYSICAL REVIEW B | 2010年 / 81卷 / 04期

基金：

美国国家科学基金会;

关键词：

BIQUADRATIC EXCHANGE; ORIGIN; BIAS;

D O I：

10.1103/PhysRevB.81.045319

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We describe a systematic study of the exchange coupling between a magnetically hard metallic ferromagnet (MnAs) and a magnetically soft ferromagnetic semiconductor (Ga(1-x)Mn(x)As) in bilayer and trilayer heterostructures. An exchange spring model of MnAs/Ga(1-x)Mn(x)As bilayers accounts for the variation in the exchange-bias field with layer thickness and composition. We also present evidence for hole-mediated interlayer exchange coupling in MnAs/p-GaAs/Ga(1-x)Mn(x)As trilayers and study the dependence of the exchange-bias field on the thickness of the spacer layer.

引用

页数：6

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