Electrical properties of n-Si/Cu Schottky diodes formed by electrodeposition

被引：0

作者：

Ahmetoglu , M. ^{[1
]}

Alper, M. ^{[1
]}

Safak, M. ^{[1
]}

Erturk, K. ^{[1
]}

Gurpinar, B. ^{[1
]}

Kocak, F. ^{[1
]}

Haciismailoglu, C. ^{[1
]}

机构：

[1] Uludag Univ, Dept Phys, TR-16059 Gorukle, Bursa, Turkey

来源：

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS | 2007年 / 9卷 / 04期

关键词：

electrodeposition; Schottky diodes; electrical properties; DEPOSITION; HYDROGEN; SURFACES;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper we report the electrical characteristics of the Schottky diodes formed by electrodeposition of copper on n-Si (111) from 0.2 M CuSO4 5H(2)O + 0.5 M H3BO3 (pH=2.0) solution. Electrical measurements have been carried out at room temperature. n-Si/Cu diode current-voltage characteristics display low reverse-bias leakage currents and average barrier heights of 0.59 +/- 0.02 eV and 0.67 +/- 0.02 eV obtained from both I-V and C-V measurements at room temperature, respectively.

引用

页码：818 / 821

页数：4

共 14 条

[1]

Andricacos P. C., 1999, Electrochemical Society Interface, V8, P32

[2]

GOPEL W, 1991, SENSORS COMPREHENSIV, V2, P429

[3] DETERMINATION OF HETEROJUNCTION BAND OFFSETS BY CAPACITANCE-VOLTAGE PROFILING THROUGH NONABRUPT ISOTYPE HETEROJUNCTIONS [J].

KROEMER, H .

APPLIED PHYSICS LETTERS, 1985, 46 (05) :504-505

[4]

KULIEV BB, 1983, SOV PHYS SEMICOND+, V17, P875

[5] Electrochemical growth of gold on well-defined vicinal H-Si(111) surfaces studied by AFM and XRD [J].

Munford, ML ;

Maroun, F ;

Cortès, R ;

Allongue, P ;

Pasa, AA .

SURFACE SCIENCE, 2003, 537 (1-3) :95-112

[6] Electron-hole pair creation at Ag and Cu surfaces by adsorption of atomic hydrogen and deuterium [J].

Nienhaus, H ;

Bergh, HS ;

Gergen, B ;

Majumdar, A ;

Weinberg, WH ;

McFarland, EW .

PHYSICAL REVIEW LETTERS, 1999, 82 (02) :446-449

[7] Electrochemical deposition of metals onto silicon [J].

Oskam, G ;

Long, JG ;

Natarajan, A ;

Searson, PC .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1998, 31 (16) :1927-1949

[8]

Prietsch M., 1995, Physics Reports, V253, P163, DOI 10.1016/0370-1573(94)00082-E

[9]

Rhoderick E.H., 1988, MetalSemiconductor Contacts, V2

[10] Correlation between series resistance and parameters of Al/n-Si and Al/p-Si Schottky barrier diodes [J].

Siad, M ;

Keffous, A ;

Mamma, S ;

Belkacem, Y ;

Menari, H .

APPLIED SURFACE SCIENCE, 2004, 236 (1-4) :366-376

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