Preparation of freestanding GaN wafers by hydride vapor phase epitaxy with void-assisted separation

被引：255

作者：

Oshima, Y

Eri, T

Shibata, M

Sunakawa, H

Kobayashi, K

Ichihashi, T

Usui, A

机构：

[1] Hitachi Cable Ltd, Adv Res Ctr, Tsuchiura, Ibaraki 3000026, Japan

[2] NEC Corp Ltd, Photon & Wireless Devices Res Labs, Tsukuba, Ibaraki 3058501, Japan

[3] NEC Corp Ltd, Fundamental Res Labs, Tsukuba, Ibaraki 3058501, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2003年 / 42卷 / 1A-B期

关键词：

freestanding GaN; HVPE; TiN; X-ray diffraction; etch pit; TEM;

D O I：

10.1143/JJAP.42.L1

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have developed a novel technique for preparing large-scale freestanding GaN wafers. Hydride vapor phase epitaxy (HVPE) growth of thick GaN layer was performed on a GaN template with a thin TiN film on the top. After the cooling process of the HVPE growth, the thick GaN layer was easily separated from the template by the assistance of many voids generated around the TiN film. As a result, a freestanding GaN wafer was obtained. The wafer obtained had a diameter of 45 mm, and a mirror-like surface. The-full-width-at-half-maximum (FWHM) of (0002) and (10 (1) over bar0) peaks in the X-ray rocking curve profile were 60 and 92 arcsec, respectively. The dislocation density was evaluated at 5 x 10(6) cm(-3) by etch pit density measurement.

引用

页码：L1 / L3

页数：3

共 19 条

[1] METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF A HIGH-QUALITY GAN FILM USING AN AIN BUFFER LAYER [J].