Annealing effect on photoluminescence of Tb-doped AlBON films

被引：3

作者：

Masumoto, Keiko ^{[1
]}

Kimura, Chiharu ^{[1
]}

Aoki, Hidemitsu ^{[1
]}

Sugino, Takashi ^{[1
]}

机构：

[1] Osaka Univ, Grad Sch Engn, Dept Elect Elect & Informat Engn, Suita, Osaka 5650871, Japan

来源：

SOLID STATE COMMUNICATIONS | 2010年 / 150卷 / 29-30期

关键词：

Rare earth; Semiconductors; Luminescence; X-ray photoelectron spectroscopy; THIN-FILMS; VISIBLE CATHODOLUMINESCENCE; RARE-EARTH; ER; ELECTROLUMINESCENCE; EU; DY;

D O I：

10.1016/j.ssc.2010.04.030

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Photoluminescence (PL) of Tb-doped AlBON (AlBON:Tb) films is investigated. The AlBON:Tb films are synthesized by RF magnetron sputtering. The PL intensity of the film with 800 degrees C annealing is about 10 times larger than that of the film without annealing. X-ray photoelectron spectroscopy (XPS) measurement suggests that Tb4+ ions decrease compared with Tb3+ ions after annealing treatment. Oxygen atoms in the AlBON:Tb film are dissociated from Tb and bonded to boron atoms by annealing treatment. It is possible that decrease in Tb4+ ions leads to increase in the PL intensity by annealing treatment. (C) 2010 Elsevier Ltd. All rights reserved.

引用

页码：1396 / 1399

页数：4

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