Doping of few-layered graphene and carbon nanotubes using ion implantation

被引：60
作者：
Bangert, U. [1 ]
Bleloch, A. [2 ]
Gass, M. H. [2 ]
Seepujak, A. [1 ]
van den Berg, J. [3 ]
机构：
[1] Univ Manchester, Sch Mat Sci, Manchester M1 7HS, Lancs, England
[2] Univ Liverpool, Sch Engn, Liverpool L69 3BX, Merseyside, England
[3] Univ Salford, Sch Comp Sci & Engn, Salford M5 4WT, Greater Manches, England
来源：
PHYSICAL REVIEW B | 2010年 / 81卷 / 24期
关键词：
ENERGY; ELECTRON; BUNDLES; SPECTROSCOPY; MOLECULES; EMISSION; PLASMONS; BEAMS; GAS;
D O I：
10.1103/PhysRevB.81.245423
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Doping of nanostructured materials using a clean, efficient, and site-selective route such as ion implantation would be hugely desirable for realization of large-scale production methods. Here, ion implantation is used to create uniform impurity-atom densities which are both dose and spatially controlled within multiwalled carbon nanotubes and graphene. The technique is demonstrated for a range of dopants, including silver, representing a likely candidate for optical enhancement, and boron, which is predicted to introduce a plasmon within the visible-frequency regime. Electron energy-loss spectroscopy performed within an aberration-corrected scanning transmission electron microscope, in combination with high-angle-annular-dark-field imaging, is used to pinpoint and identify the bonding configuration of single foreign species within the matrix. © 2010 The American Physical Society.
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页数：11
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