Selective epitaxial growth of silicon carbide on patterned silicon substrates using hexachlorodisilane and propane

To improve the quality of heteroepitaxially grown 3C-SiC on Si, a selective epitaxial growth approach has been developed. An oxide mask was used and almost perfect selectivity was obtained at high temperatures (similar to 1350 degreesC). However, the oxide mask began to peel off at temperatures above similar to 1250 degreesC, resulting in damaged masks. In order to lower the temperature for epitaxial growth, trimethylaluminium (TMA) was used and epitaxial films successfully grown at 1250 degreesC. Using this approach, selective epitaxial growth and lateral overgrowth was demonstrated at 1250 degreesC. The use of hydrogen chloride as an in-situ etchant was critical to this process.