Spin-wave scattering at low temperatures in manganite films

被引：21

作者：

Chen, XJ ^{[1
]}

Habermeier, HU

Zhang, CL

Zhang, H

Almasan, CC

机构：

[1] Kent State Univ, Dept Phys, Kent, OH 44242 USA

[2] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany

来源：

PHYSICAL REVIEW B | 2003年 / 67卷 / 13期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1103/PhysRevB.67.134405

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The temperature T and magnetic field H dependence of the resistivity rho has been measured for La0.8-ySr0.2MnO3 (y=0 and 0.128) films grown on (100) SrTiO3 substrates. The low-temperature rho in the ferromagnetic metallic region follows well rho(H,T)=rho(0)(H)+A(H)omega(s)/sinh(homega(s)/2k(B)T)+B(H)T-7/2 with rho(0) being the residual resistivity. We attribute the second and third term to small-polaron and spin-wave scattering, respectively. Our analysis based on these scattering mechanisms also gives the observed difference between the metal-insulator transition temperatures of the films studied. Transport measurements in applied magnetic field further indicate that spin-wave scattering is a key transport mechanism at low temperatures.

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