On the galvanomagnetic and structural, properties of granular (CoNi)x-(SiO2)1-x thin films

The aim of this paper is to present some results concerning the galvanomagnetic, electrical and structural properties of (CoNi)(x) - (SiO2)(1-x) (for x values between 0.4 and 0.6) thin films in view of their utilization for manufacturing galvanomagnetic devices. The samples were thermally treated at in vacuum at temperatures between 150 degreesC and 300 degreesC, in order to stabilise their physical properties. Their microstructure and composition have been investigated by transmission electron microscopy and X-ray diffractometry, respectively. The galvanomagnetic measurements were made in air, at room temperature, by van der Pauw method. The influence of composition and post - deposition annealing on the microstructure, electrical resistivity and galvanomagnetic sensitivity of (CoNi)(x)-(SiO2)(1-x) thin films is discussed.