Quantitative depth profile analysis of boron implanted silicon by pulsed radiofrequency glow discharge time-of-flight mass spectrometry

被引：37

作者：

Pisonero, J. ^{[1
]}

Lobo, L. ^{[2
]}

Bordel, N. ^{[1
]}

Tempez, A. ^{[3
]}

Bensaoula, A. ^{[4
,5
]}

Badi, N. ^{[4
,5
]}

Sanz-Medel, A. ^{[2
]}

机构：

[1] Univ Oviedo, Dept Phys, Mieres 33600, Spain

[2] Univ Oviedo, Dept Phys & Analyt Chem, E-33006 Oviedo, Spain

[3] HORIBA Jobin Yvon, F-91160 Longjumeau, France

[4] Univ Houston, Ctr Adv Mat, Dept Phys, Houston, TX 77204 USA

[5] Univ Houston, Ctr Adv Mat, Dept Elect & Comp Engn, Houston, TX 77204 USA

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2010年 / 94卷 / 08期

关键词：

Glow discharge; Mass spectrometry; Doped silicon; Multi-crystalline and monocrystalline silicon; Depth profile; Boron mass content; THIN;

D O I：

10.1016/j.solmat.2010.04.002

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The analytical potential of pulsed radiofrequency glow discharge time-of-flight mass spectrometry (pulsed-rf-GD-TOFMS) is investigated for fast quantitative analysis of major and dopant elements in bulk and thin film layers. This technique does not require sampling at ultra-high vacuum conditions and so it facilitates high sample throughput compared to reference techniques as secondary ionization mass spectrometry (SIMS). In this paper, bulk and boron implanted silicon samples are analyzed. Boron concentration in Si samples is calculated from calibration curves obtained using solar grade silicon and B doped silicon wafers as calibrating materials, and using Si-29(+) ion signal as internal standard. Qualitative depth profiles of I B implanted silicon are determined in a few seconds using the low-pressure pulsed-rf-GD-TOFMS system. Additionally, quantitative depth profiles are easily determined making use of the calibration curves. A good agreement with the depth profiles measured using SIMS was obtained, demonstrating the analytical potential of the pulsed-GD-TOFMS system for fast, sensitive and high depth resolution analysis of implanted silicon samples. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：1352 / 1357

页数：6

共 15 条

[1] Development and analytical characterization of a Grimm-type glow discharge ion source operated with high gas flow rates and coupled to a mass spectrometer with high mass resolution [J].