Direct ultrafast laser micro-structuring of materials using programmable beam shaping

被引:63
作者
Sanner, N.
Huot, N.
Audouard, E.
Larat, C.
Huignard, J.-P.
机构
[1] CNRS, UMR 5516, Lab Traitement Signal & Instrumentat, F-42000 St Etienne, France
[2] Thales Res & Technol, F-91404 Orsay, France
关键词
femtosecond laser processing; laser beam shaping;
D O I
10.1016/j.optlaseng.2006.10.009
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Using active and programmable focal-spot shaping, we demonstrate direct femtosecond laser micro-structuring of materials. Surface marking as well as drilling with user-defined geometrical shapes of small dimensions (20 mu m) are performed, without moving the laser beam nor the material target. (C) 2006 Elsevier Ltd. All rights reserved.
引用
收藏
页码:737 / 741
页数:5
相关论文
共 30 条
[1]   LIQUID-CRYSTAL LIGHT VALVE USING BULK MONOCRYSTALLINE BI12SIO20 AS THE PHOTOCONDUCTIVE MATERIAL [J].
AUBOURG, P ;
HUIGNARD, JP ;
HARENG, M ;
MULLEN, RA .
APPLIED OPTICS, 1982, 21 (20) :3706-3712
[2]   Material effects in ultra-short pulse laser drilling of metals [J].
Banks, PS ;
Feit, MD ;
Rubenchik, AM ;
Stuart, BC ;
Perry, MD .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1999, 69 (Suppl 1) :S377-S380
[3]  
Bauerle D., 2011, LASER PROCESSING CHE, V4
[4]   Efficient submicron processing of metals with femtosecond UV pulses [J].
Békési, J ;
Klein-Wiele, JH ;
Simon, P .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2003, 76 (03) :355-357
[5]   Visible and near-infrared responsivity of femtosecond-laser microstructured silicon photodiodes [J].
Carey, JE ;
Crouch, CH ;
Shen, MY ;
Mazur, E .
OPTICS LETTERS, 2005, 30 (14) :1773-1775
[6]   Hydrodynamic simulations of metal ablation by femtosecond laser irradiation [J].
Colombier, JP ;
Combis, P ;
Bonneau, F ;
Le Harzic, R ;
Audouard, E .
PHYSICAL REVIEW B, 2005, 71 (16)
[7]   Surface patterning on insulators upon femtosecond laser ablation [J].
Costache, F ;
Henyk, M ;
Reif, J .
APPLIED SURFACE SCIENCE, 2003, 208 :486-491
[8]   SURFACE RIPPLES ON SILICON AND GALLIUM-ARSENIDE UNDER PICOSECOND LASER ILLUMINATION [J].
FAUCHET, PM ;
SIEGMAN, AE .
APPLIED PHYSICS LETTERS, 1982, 40 (09) :824-826
[9]  
HUOT N, 2004, Patent No. 0407156
[10]   Optics at critical intensity:: Applications to nanomorphing [J].
Joglekar, AP ;
Liu, HH ;
Meyhöfer, E ;
Mourou, G ;
Hunt, AJ .
PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 2004, 101 (16) :5856-5861