High Er3+ luminescent efficiency in Er-doped SiOx films containing amorphous Si nanodots

被引：7

作者：

Lu, Ying-Wei ^{[1
]}

Huang, Chao ^{[1
]}

Cheng, Ji-Gui ^{[1
]}

Larsen, Arne Nylandsted ^{[2
,3
]}

机构：

[1] Hefei Univ Technol, Sch Mat Sci & Engn, Hefei 230009, Anhui, Peoples R China

[2] Aarhus Univ, Dept Phys & Astron, DK-8000 Aarhus C, Denmark

[3] Aarhus Univ, Interdisciplinary Nanosci Ctr INANO, DK-8000 Aarhus C, Denmark

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2016年 / 676卷

关键词：

Er ions; Photoluminescence; Luminescent efficiency; Si-O-Er complex; OPTICAL-PROPERTIES; ENERGY-TRANSFER; SILICON-OXIDE; ERBIUM; EMISSION; PHOTOLUMINESCENCE; GLASSES; NANOCRYSTALS; TEMPERATURE;

D O I：

10.1016/j.jallcom.2016.03.184

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Er-doped SiO1.87 films containing amorphous Si nanodots were deposited and heat-treated at the two temperatures 950 and 1100 degrees C. On the basis of morphological observations, structural characterizations and optical measurements it is concluded that the heat-treatment at 1100 degrees C results in a 3-fold higher Er3+ luminescent efficiency than the one at 950 degrees C due to the formation of Si-O-Er complex rather than the nature of sensitizers. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：428 / 431

页数：4

共 29 条

[21] Energy transfer between amorphous Si nanoclusters and Er3+ ions in a SiO2 matrix [J].

Navarro-Urrios, D. ;

Pitanti, A. ;

Daldosso, N. ;

Gourbilleau, F. ;

Rizk, R. ;

Garrido, B. ;

Pavesi, L. .

PHYSICAL REVIEW B, 2009, 79 (19)

[22] OPTICAL DOPING OF WAVE-GUIDE MATERIALS BY MEV ER IMPLANTATION [J].

POLMAN, A ;

JACOBSON, DC ;

EAGLESHAM, DJ ;

KISTLER, RC ;

POATE, JM .

JOURNAL OF APPLIED PHYSICS, 1991, 70 (07) :3778-3784

[23] Role of the energy transfer in the optical properties of undoped and Er-doped interacting Si nanocrystals [J].

Priolo, F ;

Franzò, G ;

Pacifici, D ;

Vinciguerra, V ;

Iacona, F ;

Irrera, A .

JOURNAL OF APPLIED PHYSICS, 2001, 89 (01) :264-272

[24] Luminescence-center-mediated excitation as the dominant Er sensitization mechanism in Er-doped silicon-rich SiO2 films [J].

Savchyn, Oleksandr ;

Ruhge, Forrest R. ;

Kik, Pieter G. ;

Todi, Ravi M. ;

Coffey, Kevin R. ;

Nukala, Haritha ;

Heinrich, Helge .

PHYSICAL REVIEW B, 2007, 76 (19)

[25] Si:Er:O layers grown by molecular beam epitaxy:: structural, electrical and optical properties [J].

Scalese, S ;

Franzò, G ;

Mirabella, S ;

Re, M ;

Terrasi, A ;

Priolo, F ;

Rimini, E ;

Camera, A .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2001, 81 (1-3) :62-66

[26] Enhancement of Er optical efficiency through bismuth sensitization in yttrium oxide [J].

Scarangella, Adriana ;

Reitano, Riccardo ;

Franzo, Giorgia ;

Priolo, Francesco ;

Miritello, Maria .

APPLIED PHYSICS LETTERS, 2015, 107 (04)

[27] Precipitate coarsening and self organization in erbium-doped silica [J].

Sckerl, MW ;

Guldberg-Kjaer, S ;

Poulsen, MR ;

Shi, P ;

Chevallier, J .

PHYSICAL REVIEW B, 1999, 59 (21) :13494-13497

[28] Rate equation modelling of erbium luminescence dynamics in erbium-doped silicon-rich-silicon-oxide [J].

Shah, Miraj ;

Wojdak, Maciej ;

Kenyon, Anthony J. ;

Halsall, Matthew P. ;

Li, Hang ;

Crowe, Iain F. .

JOURNAL OF LUMINESCENCE, 2012, 132 (12) :3103-3112

[29] Photoluminescence of erbium in SiOxNy alloys annealed at high temperature [J].

Steveler, E. ;

Rinnert, H. ;

Vergnat, M. .

JOURNAL OF ALLOYS AND COMPOUNDS, 2014, 593 :56-60

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