High Er3+ luminescent efficiency in Er-doped SiOx films containing amorphous Si nanodots

被引：7

作者：

Lu, Ying-Wei ^{[1
]}

Huang, Chao ^{[1
]}

Cheng, Ji-Gui ^{[1
]}

Larsen, Arne Nylandsted ^{[2
,3
]}

机构：

[1] Hefei Univ Technol, Sch Mat Sci & Engn, Hefei 230009, Anhui, Peoples R China

[2] Aarhus Univ, Dept Phys & Astron, DK-8000 Aarhus C, Denmark

[3] Aarhus Univ, Interdisciplinary Nanosci Ctr INANO, DK-8000 Aarhus C, Denmark

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2016年 / 676卷

关键词：

Er ions; Photoluminescence; Luminescent efficiency; Si-O-Er complex; OPTICAL-PROPERTIES; ENERGY-TRANSFER; SILICON-OXIDE; ERBIUM; EMISSION; PHOTOLUMINESCENCE; GLASSES; NANOCRYSTALS; TEMPERATURE;

D O I：

10.1016/j.jallcom.2016.03.184

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Er-doped SiO1.87 films containing amorphous Si nanodots were deposited and heat-treated at the two temperatures 950 and 1100 degrees C. On the basis of morphological observations, structural characterizations and optical measurements it is concluded that the heat-treatment at 1100 degrees C results in a 3-fold higher Er3+ luminescent efficiency than the one at 950 degrees C due to the formation of Si-O-Er complex rather than the nature of sensitizers. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：428 / 431

页数：4

共 29 条

[1] Submicrosecond fluorescence dynamics in erbium-doped silicon-rich silicon oxide multilayers [J].

Al Choueiry, A. ;

Jurdyc, A. M. ;

Jacquier, B. ;

Gourbilleau, F. ;

Rizk, R. .

JOURNAL OF APPLIED PHYSICS, 2009, 106 (05)

[2] Dramatic enhancement of 1.54 μm emission in Er doped GaN quantum well structures [J].

Al Tahtamouni, T. M. ;

Stachowicz, M. ;

Li, J. ;

Lin, J. Y. ;

Jiang, H. X. .

APPLIED PHYSICS LETTERS, 2015, 106 (12)

[3] VISIBLE-LIGHT EMISSION FROM THIN-FILMS CONTAINING SI, O, N, AND H [J].

AUGUSTINE, BH ;

IRENE, EA ;

HE, YJ ;

PRICE, KJ ;

MCNEIL, LE ;

CHRISTENSEN, KN ;

MAHER, DM .

JOURNAL OF APPLIED PHYSICS, 1995, 78 (06) :4020-4030

[4] Analysis of energy transfer process based emission spectra of erbium doped germanate glasses for mid-infrared laser materials [J].

Cai, Muzhi ;

Wei, Tao ;

Zhou, Beier ;

Tian, Ying ;

Zhou, Jiajia ;

Xu, Shiqing ;

Zhang, Junjie .

JOURNAL OF ALLOYS AND COMPOUNDS, 2015, 626 :165-172

[5] Surface plasmon resonance induced Er3+ photoluminescence enhancement in tellurite [J].

Fares, Hssen ;

Elhouichet, Habib ;

Gelloz, Bernard ;

Ferid, Mokhtar .

JOURNAL OF APPLIED PHYSICS, 2015, 117 (19)

[6] Optimized conditions for an enhanced coupling rate between Er ions and Si nanoclusters for an improved 1.54-μm emission [J].

Gourbilleau, F ;

Levalois, M ;

Dufour, C ;

Vicens, J ;

Rizk, R .

JOURNAL OF APPLIED PHYSICS, 2004, 95 (07) :3717-3722

[7] Nanosecond dynamics of the near-infrared photoluminescence of Er-doped SiO2 sensitized with Si nanocrystals [J].

Izeddin, I. ;

Moskalenko, A. S. ;

Yassievich, I. N. ;

Fujii, M. ;

Gregorkiewicz, T. .

PHYSICAL REVIEW LETTERS, 2006, 97 (20)

[8] Energy transfer in Er-doped SiO2 sensitized with si nanocrystals [J].

Izeddin, I. ;

Timmerman, D. ;

Gregorkiewicz, T. ;

Moskalenko, A. S. ;

Prokofiev, A. A. ;

Yassievich, I. N. ;

Fujii, M. .

PHYSICAL REVIEW B, 2008, 78 (03)

[9] Er sensitization by a thin Si layer: Interaction-distance dependence [J].

Julsgaard, B. ;

Lu, Y. -W. ;

Jensen, R. V. Skougaard ;

Pedersen, T. G. ;

Pedersen, K. ;

Chevallier, J. ;

Balling, P. ;

Larsen, A. Nylandsted .

PHYSICAL REVIEW B, 2011, 84 (08)

[10] Oxidation of thin erbium and erbium silicide overlayers in contact with silicon oxide films thermally grows on silicon [J].

Kennou, S ;

Ladas, S ;

Grimaldi, MG ;

Tan, TAN ;

Veuillen, JY .

APPLIED SURFACE SCIENCE, 1996, 102 :142-146

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