Semipolar AlN on Si(100): Technology and properties

被引：8

作者：

Bessolov, V. ^{[1
]}

Kalmykov, A. ^{[1
]}

Konenkov, S. ^{[2
]}

Konenkova, E. ^{[1
,3
]}

Kukushkin, S. ^{[3
,4
]}

Myasoedov, A. ^{[1
]}

Osipov, A. ^{[3
,4
]}

Panteleev, V. ^{[1
]}

机构：

[1] AF Ioffe Inst, St Petersburg, Russia

[2] St Petersburg State Univ, St Petersburg, Russia

[3] St Petersburg Natl Res Univ Informat Technol Mech, St Petersburg, Russia

[4] Inst Problem Mech Engn, St Petersburg, Russia

来源：

MICROELECTRONIC ENGINEERING | 2017年 / 178卷

基金：

俄罗斯基础研究基金会;

关键词：

Hydride vapor phase epitaxy; Silicon; Silicon carbide; Semiconducting III-V materials; BUFFER LAYERS; SI(001); GAN;

D O I：

10.1016/j.mee.2017.04.047

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Initial stages of the semipolar AIN layer formation by chloride-hydride vapor phase epitaxy on a misoriented Si(100) substrate with a thin intermediate nano-SiC layer grown by atomic substitution method are investigated. It is found that once the growth rate of AIN layer on a nano-SiC/Si(100) substrate is about 0.02 mu m/h, the layer is formed in a polar direction. On the other hand, at the growth rate of 1 mu m/h the layer is formed in a semipolar direction. We propose the model of the semipolar AIN layer growth based on the formation of the special structure on the SiC layer synthesized by atomic substitution and on the possibility of the matching of the quasi-lattices of Al(20-23) and 3C-SiC(100) planes assuming bonding of four atoms from the layer to four atoms of the 3C-SiC quasi-lattice consisting of three lattice unit cells in one of the directions. (C) 2017 Elsevier B.V. All rights reserved.

引用

页码：34 / 37

页数：4

共 15 条

[1] Semipolar nitrides grown on Si(001) offcut substrates with 3C-SiC buffer layers [J].