Minority carrier traps in Czochralski-grown p-type silicon crystals doped with B, Al, Ga, or In impurity atoms

被引：0
|
作者：
de Guzman, Joyce Ann T. [1 ,2 ]
Markevich, Vladimir P. [1 ,2 ]
Hammersley, Simon [1 ,2 ]
Hawkins, Ian D. [1 ,2 ]
Crowe, Kin [1 ,2 ]
Abrosimov, Nikolay, V [3 ]
Falster, Robert [4 ]
Binns, Jeff [5 ]
Altermatt, Pietro [6 ]
Halsall, Matthew P. [1 ,2 ]
Peaker, Anthony R. [1 ,2 ]
机构：
[1] Univ Manchester, Photon Sci Inst, Manchester, Lancs, England
[2] Univ Manchester, Dept EEE, Manchester, Lancs, England
[3] Leibniz Inst Kristallzuchtung IKZ, Berlin, Germany
[4] SunEdison Semicond, Merano, Italy
[5] GCL Solar Mat, St Peters, MO USA
[6] Trina Solar Ltd, Changzhou, Peoples R China
来源：
2020 47TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2020年
基金：
英国工程与自然科学研究理事会;
关键词：
p-type silicon; minority carriers; trapping center; defects; deep-level transient spectroscopy; DEGRADATION;
D O I：
10.1109/pvsc45281.2020.9300860
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Minority carrier traps in Czochralski-grown (Cz) silicon crystals doped with either boron, aluminum, gallium, or indium impurity atoms have been investigated by means of deep-level transient spectroscopy and other junction-related techniques. The experimental data have suggested that minority carrier trapping effects in Cz-Si samples doped with different acceptor impurities are associated with complexes incorporating a substitutional group-III impurity atom and two oxygen atoms, which are found to be negative-U defects with close locations of E(-/+) occupancy level at about E-nu + 0.32 eV. We have determined the energy barriers and frequency factors for the reversible transformations of the complexes between deep donor and shallow acceptor states. These parameters are discussed in relation to light-induced degradation behavior of solar cells on p-type Cz-Si crystals.
引用
收藏
页码：1013 / 1018
页数：6
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