Characteristics of Ce-Doped ZrO2 Dielectric Films Prepared by a Solution Deposition Process

被引：13
作者：
Lee, Myung Soo [1 ]
An, Chee-Hong [1 ]
Lim, Jun Hyung [2 ]
Joo, Jin-Ho [1 ]
Lee, Hoo-Jeong [1 ]
Kim, Hyoungsub [1 ]
机构：
[1] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 440746, South Korea
[2] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2010年 / 157卷 / 06期
关键词：
CONDUCTION MECHANISM; THIN-FILMS; ZIRCONIA; DEVICES; OXIDE; CERIA;
D O I：
10.1149/1.3367749
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
The microstructural and electrical properties of sol-gel deposited ultrathin Zr1-xCexO2 films with different Ce contents (x = 0, 0.1, 0.3, and 0.5) were studied using various characterization tools. Ce doping reduced the crystallization (densification) temperature and increased the dielectric constant of the Zr1-xCexO2 film. There was no degradation of the hysteresis characteristics, and a systematic negative shift in the flatband voltage was observed by incorporating Ce atoms. Leakage current measurements showed no detrimental effects of Ce doping up to x = 0.5, and the conduction mechanism analyses revealed that the Zr1-xCexO2 films follow a Poole-Frenkel (PF) conduction, exhibiting a systematic increase in the linear slope of the PF plot possibly due to the decrease in dielectric trap sites with increasing Ce content. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3367749] All rights reserved.
引用
收藏
页码：G142 / G146
页数：5
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