Effect of Zinc-Doping on the Reduction of the Hot-Carrier Cooling Rate in Halide Perovskites

被引:83
作者
Wei, Qi [1 ]
Yin, Jun [2 ]
Bakr, Osman M. [2 ]
Wang, Ze [3 ]
Wang, Chenhao [3 ]
Mohammed, Omar F. [2 ]
Li, Mingjie [3 ]
Xing, Guichuan [1 ]
机构
[1] Univ Macau, Inst Appl Phys & Mat Engn, Joint Key Lab, Minist Educ, Macau 999078, Peoples R China
[2] King Abdullah Univ Sci & Technol KAUST, Div Phys Sci & Engn, Thuwal 239556900, Saudi Arabia
[3] Hong Kong Polytech Univ, Dept Appl Phys, Hung Hom, Kowloon, Hong Kong, Peoples R China
基金
中国博士后科学基金;
关键词
carrier extraction; doped perovskites; halide perovskites; hot-carrier cooling; nonadiabatic molecular dynamics; RELAXATION DYNAMICS; PYXAID PROGRAM; SOLAR-CELLS; EFFICIENCY; CSPBI2BR; THERMALIZATION; EMISSION;
D O I
10.1002/anie.202100099
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The fast hot-carrier cooling process in the solar-absorbers fundamentally limits their photon-conversion efficiencies. It is highly desirable to develop a solar absorber with long-lived hot-carriers at sun-illumination intensity, which can be used to develop the hot-carrier solar cells with enhanced efficiency. Herein, we reveal that zinc-doped (0.34 %) halide perovskites have the slower hot-carrier cooling compared with the pristine sample through the transient absorption spectroscopy measurements and theoretical calculations. The hot-carrier energy loss rate at the low photoexcitation level of 10(17) cm(-3) is found to be approximate to 3 times smaller than that of un-doped perovskites for T=500 K hot carriers, and up to ten times when the hot-carrier temperature approaches the lattice temperature. The incorporation of zinc-dopant into perovskites can reduce the nonadiabatic couplings between conduction bands, which retards the photogenerated hot-carriers relaxation processes. Our findings present a practical strategy to slow down the hot-carrier cooling in perovskites at low carrier densities, which would be invaluable for the further development of practical hot-carrier photovoltaics based on perovskites.
引用
收藏
页码:10957 / 10963
页数:7
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