Effects of growth-charge purity and perfection of Bi0.5Sb1.5Te3 single crystals on their thermoelectric properties

被引：2

作者：

Ivanova, LD

Granatkina, YV

Scherrer, H

机构：

[1] Russian Acad Sci, Baikov Inst Met & Mat Res, Moscow 117334, Russia

[2] EMN, Phys Mat Lab, F-54042 Nancy, France

来源：

INORGANIC MATERIALS | 2000年 / 36卷 / 07期

关键词：

Thermoelectric Property; Thermoelectric Power; Misorientation Angle; Perfect Crystal; Zmax;

D O I：

10.1007/BF02758420

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Bi0.5Sb1.5Te3 crystals, undoped and doped with 4 mol % Bi2Se3, were grown by the floating-crucible technique, using starting materials of 99.9999 or 99.99% purity. The perfection of the crystals (mosaic blocks, second-phase inclusions, dislocation density) was correlated with growth conditions. The elemental composition of several samples was determined by electron probe x-ray microanalysis. The room-temperature electrical conductivity, thermal conductivity, thermoelectric power, carrier concentration, and effective mass and mobility of holes were determined. In the range from 100 to 400 K, the electrical conductivity, thermoelectric power, thermal conductivity, and thermoelectric figure of merit of the crystals were measured.

引用

页码：678 / 684

页数：7