CVD Diamond growth in the silicon substrates of large area

被引：0
|
作者：
Moro, Joao Roberto [1 ]
Trava-Airoldi, Vladimir Jesus [2 ]
Corat, Evaldo Jose [2 ]
Eichenberger Neto, Joao [3 ]
Amorim, Amauri [4 ]
Alves, Arnaldo Ribeiro [3 ]
机构：
[1] Univ Estadual Campinas, FCA, Limeira, SP, Brazil
[2] INPE, Sao Jose Dos Campos, SP, Brazil
[3] FAC, Campinas, SP, Brazil
[4] IFSP, Salto, SP, Brazil
来源：
REM-REVISTA ESCOLA DE MINAS | 2010年 / 63卷 / 02期
关键词：
CVD diamond; growth; large area; STRESSES; FILMS;
D O I：
10.1590/S0370-44672010000200011
中图分类号：
学科分类号：
摘要：
Diamond films were grown through Chemical Vapor Deposition (CVD) in silicon substrates (100) of large area (80 cm(2),), in a hot filament chemical vapor deposition (HFCVD), with growth rates over 1,5 mu m/h. The growth of samples was made with different gaseous fluxes and different methane percentages (CH4) in hydrogen (H-2). The samples were analyzed through optical microscopy, Scanning Electron Microscopy and Raman spectroscopy scattering. Such analyzes showed the presence of a high purity diamond in all samples.
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页码：279 / 285
页数：7
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