The influence of carbon doping on the performance of Gd2O3 as high-k gate dielectric

被引：7
|
作者：
Shekhter, P. [1 ]
Chaudhuri, A. R. [2 ]
Laha, A. [3 ]
Yehezkel, S. [1 ]
Shriki, A. [1 ]
Osten, H. J. [2 ]
Eizenberg, M. [1 ]
机构：
[1] Technion Israel Inst Technol, Dept Mat Sci & Engn, IL-32000 Haifa, Israel
[2] Leibniz Univ Hannover, Inst Elect Mat & Devices, D-30167 Hannover, Germany
[3] Indian Inst Technol, Dept Elect Engn, Bombay 400076, Powai, India
来源：
APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 26期
关键词：
SILICON; SI; INTERFACE; OXIDES; Y2O3;
D O I：
10.1063/1.4905356
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
One of the approaches for overcoming the issue of leakage current in modern metal-oxide-semiconductor devices is utilizing the high dielectric constants of lanthanide based oxides. We investigated the effect of carbon doping directly into Gd2O3 layers on the performance of such devices. It was found that the amount of carbon introduced into the dielectric is above the solubility limit; carbon atoms enrich the oxide-semiconductor interface and cause a significant shift in the flat band voltage of the stack. Although the carbon atoms slightly degrade this interface, this method has a potential for tuning the flat band voltage of such structures. (C) 2014 AIP Publishing LLC.
引用
收藏
页数：3
相关论文
共 50 条
  • [1] Charge trapping in ultrathin Gd2O3 high-k dielectric
    Nazarov, A. N.
    Gomeniuk, Y. V.
    Gomeniuk, Y. Y.
    Gottlob, H. D. B.
    Schmidt, M.
    Lemme, M. C.
    Czernohorsky, M.
    Osten, H. J.
    MICROELECTRONIC ENGINEERING, 2007, 84 (9-10) : 1968 - 1971
  • [2] Structure analysis of epitaxial Gd2O3/Si(001) for high-k gate dielectric applications
    Watahiki, Tatsuro
    Jenichen, Bernd
    Shayduk, Roman
    Tinkham, Brad P.
    Braun, Wolfgang
    Riechert, Henning
    JOURNAL OF CRYSTAL GROWTH, 2009, 311 (07) : 2179 - 2182
  • [3] Ga2O3(Gd2O3) film as high-k gate dielectric for SiGe MOSFET devices
    Pal, S
    Ray, SK
    Lahiri, S
    Bose, DN
    ELECTRONICS LETTERS, 2000, 36 (24) : 2044 - 2046
  • [4] CMOS integration of epitaxial Gd2O3 high-k gate dielectrics
    Gottlob, H. D. B.
    Echtermeyer, T.
    Mollenhauer, T.
    Efavi, J. K.
    Schmidt, M.
    Wahlbrink, T.
    Lemme, M. C.
    Kurz, H.
    Czernohorsky, M.
    Bugiel, E.
    Osten, H. -J
    Fissel, A.
    SOLID-STATE ELECTRONICS, 2006, 50 (06) : 979 - 985
  • [5] Leakage current mechanisms in epitaxial Gd2O3 high-k gate dielectrics
    Gottlob, H. D. B.
    Echtermeyer, T. J.
    Schmidt, M.
    Mollenhauer, T.
    Wahlbrink, T.
    Lemme, M. C.
    Kurz, H.
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2008, 11 (03) : G12 - G14
  • [6] Novel hysteresis effect in ultrathin epitaxial Gd2O3 high-k dielectric
    Nazarov, A. N.
    Gomeniuk, Y. V.
    Gomeniuk, Y. Y.
    Lysenko, V. S.
    Gottlob, H. D. B.
    Schmidt, M.
    Lemme, M. C.
    Czernohorsky, M.
    Osten, H. J.
    SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS, 2008, 11 (04) : 324 - 328
  • [7] Gd2O3, Ga2O3(Gd2O3), Y2O3 and Ga2O3, as high-k gate dielectrics on SiGe -: a comparative study
    Pal, S
    Ray, SK
    Lahiri, SK
    Bose, DN
    PROCEEDINGS OF THE ELEVENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOL 1 & 2, 2002, 4746 : 1174 - 1177
  • [8] Gd2O3, Ga2O3(Gd2O3), Y2O3, and Ga2O3, as high-k gate dielectrics on SiGe:: A comparative study
    Pal, S
    Ray, SK
    Chakraborty, BR
    Lahiri, SK
    Bose, DN
    JOURNAL OF APPLIED PHYSICS, 2001, 90 (08) : 4103 - 4107
  • [9] Gd2O3, Ga2O3(Gd2O3), Y2O3, and Ga2O3, as high-K gate dielectrics on sige: A comparative study
    1600, American Institute of Physics Inc. (90):
  • [10] Ta-doped modified Gd2O3 film for a novel high k gate dielectric
    Li, Shuan
    Wu, Yanqing
    Li, Guoling
    Yu, Hongen
    Fu, Kai
    Wu, Yong
    Zheng, Jie
    Tian, Wenhuai
    Li, Xingguo
    JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY, 2019, 35 (10) : 2305 - 2311
12345