Group III nitride-based UV light emitting devices

被引：14
|
作者：
Amano, H [1 ]
Takanami, S [1 ]
Iwaya, M [1 ]
Kamiyama, S [1 ]
Akasaki, I [1 ]
机构：
[1] Meijo Univ, High Tech Res Ctr, Tempaku Ku, Nagoya, Aichi 4688502, Japan
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 2003年 / 195卷 / 03期
关键词：
D O I：
10.1002/pssa.200306141
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The effect of the non-radiative recombination center at or around the dislocations on the performance of the AlGaN-based UV light emitting diode (LED) is discussed. For high-efficiency emission, it is necessary to reduce the density of dislocations to less than 5 x 10(7) cm(-2).
引用
收藏
页码：491 / 495
页数：5
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