High-rate chemical vapor deposition of nanocrystalline silicon carbide films by radio frequency thermal plasma

被引：32

作者：

Liao, F

Park, S

Larson, JM

Zachariah, MR

Girshick, SL

机构：

[1] Univ Minnesota, Dept Mech Engn, Minneapolis, MN 55408 USA

[2] Spinnaker Semicond, Eden Prairie, MN USA

来源：

MATERIALS LETTERS | 2003年 / 57卷 / 13-14期

基金：

美国国家科学基金会;

关键词：

ceramics; chemical vapor deposition; nanomaterials; silicon carbide; thermal plasmas; thin films; Si tetrachlorine precursor;

D O I：

10.1016/S0167-577X(02)01116-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Silicon carbide films were deposited by radio frequency thermal plasma chemical vapor deposition (CVD) at rates up to several hundred micrometers per hour over a 40-mm diameter substrate. The films were primarily beta-phase SiC. Film morphology was characterized by columnar growth terminating in hemispherical surfaces. The average crystallite size as determined by X-ray diffraction line broadening ranged from about 5 to 100 nm, and increased with increasing substrate temperature. The film growth rate varied linearly with the input flow rate of SiCl4 precursor, and appeared to be independent of substrate temperature over the range 680-1215 degreesC. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：1982 / 1986

页数：5

共 5 条

[1]

Bieberich MT, 1996, PLASMA CHEM PLASMA P, V16, pS157, DOI 10.1007/BF01512633

[2] Thermal plasma chemical vapor deposition of Si-based ceramic coatings from liquid precursors [J].