A 5GHz fully integrated VCO in a SiGe bipolar technology

被引：0

作者：

Kyranas, A ^{[1
]}

Papananos, Y ^{[1
]}

机构：

[1] Natl Tech Univ Athens, Microelect Circuit Design Grp, Zografou 15773, Greece

来源：

ISCAS 2000: IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS - PROCEEDINGS, VOL V: EMERGING TECHNOLOGIES FOR THE 21ST CENTURY | 2000年

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

A fully integrated voltage controlled oscillator operating at 5GHz is presented. The circuit is designed in a SiGe bipolar technology employing three metal layers. The design is based on a fully integrated LC tank using square spiral inductors. The simulated phase noise is -101.4 dBc/Hz at 100kHz offset. The effect of bias current on phase noise is also examined. It is shown that an optimum bias current exists, that minimizes phase noise in bipolar cross-coupled differential pair VCOs.

引用

页码：193 / 196

页数：4

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