Nonlinear IR and THz Spectroscopy of Semiconductor Nanowires

被引：0

作者：

Helm, M. ^{[1
]}

Fotev, I ^{[1
]}

Balaghi, L. ^{[1
]}

Lang, D. ^{[1
]}

Rana, R. ^{[1
]}

Winnerl, S. ^{[1
]}

Schneider, H. ^{[1
]}

Dimakis, E. ^{[1
]}

Pashkin, A. ^{[1
]}

机构：

[1] Helmholtz Zentrum Dresden Rossendorf, Bautzner Landstr 400, D-01328 Dresden, Germany

来源：

2020 45TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ) | 2020年

关键词：

D O I：

10.1109/IRMMW-THZ46771.2020.9370834

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report nonlinear charge-carrier response in GaAs/InGaAs core/shell nanowires that are driven by intense THz pulses. In the first experiment, half-cycle THz pulses emitted from an organic DSTMS crystal lead to a red-shift of the plasmon peak indicating intervalley transfer of the electrons. In the second experiment, a single, highly electron doped nanowire is investigated by scattering near-field infrared microscopy using intense free-electron laser (FEL) pulses. Here the observed red shift of the mid-infrared plasma resonance depends on the pulse energy and can be explained by heating the electron system in the nonparabolic conduction band.

引用

页数：2

共 6 条

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