Resistive switching in manganese oxide with nonlinear dependence of the local resistivity on the oxygen-vacancy concentration

被引：4

作者：

Boylo, Irina V. ^{[1
]}

机构：

[1] Donetsk Inst Phys & Technol, Rosa Luxembourg Str 72, UA-83114 Donetsk, Ukraine

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2017年 / 254卷 / 06期

关键词：

memristors; model; oxygen vacancies; resistive switching; NEGATIVE-RESISTANCE; FILMS;

D O I：

10.1002/pssb.201600698

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The present paper examines the influence of a nonlinear relationship between the local oxygen-vacancy concentration and the local resistivity on resistive switching effects in complex oxides. The continuity equation has been used as a model for the motion of oxygen vacancies when a periodic time-dependent electrical current is applied. The question of endurance of the switching cycles is discussed. It is found that nonlinearity of the resistivity-concentration dependence enhances the endurance. (C) 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页数：6

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